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| Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A 8.50.2 Unit: mm 3.40.3 1.00.1 6.00.2 10.00.3 1.50.1 Features * High forward current transfer ratio hFE which has satisfactory linearity * Low collector-emitter saturation voltage VCE(sat) * N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.40.5 Parameter Collector-base voltage (Emitter open) 2SB0929 2SB0929A Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25C Rating -60 -80 -60 -80 -5 -3 -5 35 1.3 150 -55 to +150 Unit V 1 2 2.00.5 Absolute Maximum Ratings TC = 25C Collector-emitter voltage 2SB0929 (Base open) 2SB0929A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation V (6.5) V A A W C C 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared. Junction temperature Storage temperature Electrical Characteristics TC = 25C 3C Parameter Collector-emitter voltage (Base open) Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SB0929 2SB0929A 2SB0929 2SB0929A 2SB0929 2SB0929A IEBO hFE1 * Symbol VCEO ICES ICEO Conditions IC = -30 mA, IB = 0 VCE = -60 V, VBE = 0 VCE = -80 V, VBE = 0 VCE = -30 V, IB = 0 VCE = -60 V, IB = 0 VEB = -5 V, IC = 0 VCE = -4 V, IC = -1 A VCE = -4 V, IC = -3 A VCE = -4 V, IC = -3 A IC = -3 A, IB = -0.375 A VCE = -10 V, IC = - 0.5 A, f = 10 MHz IC = -1 A, IB1 = - 0.1 A, IB2 = 0.1 A VCC = -50 V Min -60 -80 Typ Max (7.6) Unit V -200 -200 -300 -300 -1 70 10 -1.8 -1.2 30 0.5 1.2 0.3 250 A A mA V V MHz s s s Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE2 Base-emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time VBE VCE(sat) fT ton tstg tf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Publication date: April 2003 Q 70 to 150 P 120 to 250 Note) The part number in the parenthesis shows conventional part number. SJD00011BED (1.5) 0.80.1 R = 0.5 R = 0.5 2.540.3 1.00.1 1.40.1 0.40.1 5.080.5 (8.5) (6.0) 1.3 3 4.40.5 0 to 0.4 14.40.5 3.0+0.4 -0.2 1.5+0 -0.4 1 2SB0929, 2SB0929A PC Ta 40 (1)TC = Ta (2)With a 50 x 50 x 2 mm3 Al heat sink (3)Without heat sink (PC = 1.3 W) -6 IC VCE TC = 25C -10 IC VBE VCE = -4 V Collector power dissipation PC (W) -5 Collector current IC (A) -4 -80 mA -60 mA -40 mA -30 mA -20 mA -12 mA -8 mA -16 mA 0 -2 -4 -6 -8 -4 mA -10 -12 Collector current IC (A) 30 IB = -100 mA -8 -6 25C TC = 100C -4 -25C 20 (1) -3 -2 10 -1 (2) (3) 0 0 0 40 80 120 160 -2 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 104 hFE IC VCE = -4 V 104 fT I C VCE = -5 V f = 10 MHz TC = 25C Forward current transfer ratio hFE -10 Transition frequency fT (MHz) 103 TC = 100C 102 -25C 25C 103 -1 102 TC = 100C -25C 25C - 0.1 -1 -10 - 0.1 10 10 - 0.01 - 0.01 1 - 0.01 - 0.1 -1 -10 1 - 0.01 - 0.1 -1 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Safe operation area -10 ICP IC Non repetitive pulse TC = 25C t = 1 ms Rth t 103 (1)Without heat sink (2)With a 50 mm x 50 mm x 2 mm Al heat sink (1) (2) 10 Collector current IC (A) t =10 ms -1 t = 300 ms Thermal resistance Rth (C/W) -1 000 102 1 - 0.1 2SB0929A 10-1 - 0.01 -1 2SB0929 -10 -100 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector-emitter voltage VCE (V) Time t (s) 2 SJD00011BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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